From mboxrd@z Thu Jan 1 00:00:00 1970 From: =?UTF-8?B?IlNldW5naHllb24gUmhlZSAo7J207Iq57ZiEKSI=?= Date: Wed, 04 Nov 2009 17:22:26 +0900 Subject: [U-Boot] [PATCH] samsung: move DRAM parameters Message-ID: <4AF139C2.4020201@lpmtec.com> List-Id: MIME-Version: 1.0 Content-Type: text/plain; charset="us-ascii" Content-Transfer-Encoding: 7bit To: u-boot@lists.denx.de Move the definitions of DRAM parameters from SoC description (s3c6400.h) to board description (smdk6400.h). DRAM parameters are rather board-specific than SoC specific. According to the current source, one may have to change the definitions in s3c6400.h in addition to creating the new board description whenever he wants to add support for a new board based on s3c6400. I don't think this meets the U-Boot policy of separating SoC description and board description. There will be no observable changes in operation. It's just to make it easier to add support for new boards. Signed-off-by: Seunghyeon Rhee --- include/configs/smdk6400.h | 21 +++++++++++++++++++++ include/s3c6400.h | 21 --------------------- 2 files changed, 21 insertions(+), 21 deletions(-) diff --git a/include/configs/smdk6400.h b/include/configs/smdk6400.h index f6e1221..a2b46fd 100644 --- a/include/configs/smdk6400.h +++ b/include/configs/smdk6400.h @@ -309,4 +309,25 @@ # error "usb_ohci.c is currently broken with MMU enabled." #endif +/*----------------------------------------------------------------------- + * Physical Memory Map + */ +#define DMC1_MEM_CFG 0x80010012 /* Chip1, Burst4, Row/Column bit */ +#define DMC1_MEM_CFG2 0xB45 +#define DMC1_CHIP0_CFG 0x150F8 /* 0x4000_0000 ~ 0x43ff_ffff (64MB) */ +#define DMC_DDR_32_CFG 0x0 /* 32bit, DDR */ + +/* Memory Parameters */ +/* DDR Parameters */ +#define DDR_tREFRESH 7800 /* ns */ +#define DDR_tRAS 45 /* ns (min: 45ns)*/ +#define DDR_tRC 68 /* ns (min: 67.5ns)*/ +#define DDR_tRCD 23 /* ns (min: 22.5ns)*/ +#define DDR_tRFC 80 /* ns (min: 80ns)*/ +#define DDR_tRP 23 /* ns (min: 22.5ns)*/ +#define DDR_tRRD 15 /* ns (min: 15ns)*/ +#define DDR_tWR 15 /* ns (min: 15ns)*/ +#define DDR_tXSR 120 /* ns (min: 120ns)*/ +#define DDR_CASL 3 /* CAS Latency 3 */ + #endif /* __CONFIG_H */ diff --git a/include/s3c6400.h b/include/s3c6400.h index e527c08..34d0d15 100644 --- a/include/s3c6400.h +++ b/include/s3c6400.h @@ -814,27 +814,6 @@ #endif -/*----------------------------------------------------------------------- - * Physical Memory Map - */ -#define DMC1_MEM_CFG 0x80010012 /* Chip1, Burst4, Row/Column bit */ -#define DMC1_MEM_CFG2 0xB45 -#define DMC1_CHIP0_CFG 0x150F8 /* 0x4000_0000 ~ 0x43ff_ffff (64MB) */ -#define DMC_DDR_32_CFG 0x0 /* 32bit, DDR */ - -/* Memory Parameters */ -/* DDR Parameters */ -#define DDR_tREFRESH 7800 /* ns */ -#define DDR_tRAS 45 /* ns (min: 45ns)*/ -#define DDR_tRC 68 /* ns (min: 67.5ns)*/ -#define DDR_tRCD 23 /* ns (min: 22.5ns)*/ -#define DDR_tRFC 80 /* ns (min: 80ns)*/ -#define DDR_tRP 23 /* ns (min: 22.5ns)*/ -#define DDR_tRRD 15 /* ns (min: 15ns)*/ -#define DDR_tWR 15 /* ns (min: 15ns)*/ -#define DDR_tXSR 120 /* ns (min: 120ns)*/ -#define DDR_CASL 3 /* CAS Latency 3 */ - /* * mDDR memory configuration */ -- 1.6.2.5 -- Seunghyeon Rhee, Ph.D. / Director LPM Technology Inc. T +82-70-8255-6007 F +82-2-6442-6462 M +82-10-2790-0657