From: Maciej Purski <m.purski@samsung.com> To: devicetree@vger.kernel.org, linux-hwmon@vger.kernel.org, linux-doc@vger.kernel.org, linux-arm-kernel@lists.infradead.org, linux-samsung-soc@vger.kernel.org, linux-iio@vger.kernel.org Cc: Rob Herring <robh+dt@kernel.org>, Mark Rutland <mark.rutland@arm.com>, Guenter Roeck <linux@roeck-us.net>, Jean Delvare <jdelvare@suse.com>, Jonathan Corbet <corbet@lwn.net>, Russell King <linux@armlinux.org.uk>, Kukjin Kim <kgene@kernel.org>, Krzysztof Kozlowski <krzk@kernel.org>, Jonathan Cameron <jic23@kernel.org>, Hartmut Knaack <knaack.h@gmx.de>, Lars-Peter Clausen <lars@metafoo.de>, Peter Meerwald-Stadler <pmeerw@pmeerw.net>, Bartlomiej Zolnierkiewicz <b.zolnierkie@samsung.com>, Marek Szyprowski <m.szyprowski@samsung.com>, Maciej Purski <m.purski@samsung.com> Subject: [PATCH 3/4] dt-bindings: hwmon: Add max-expected-current property to ina2xx Date: Thu, 28 Sep 2017 14:50:14 +0200 [thread overview] Message-ID: <1506603015-27202-4-git-send-email-m.purski@samsung.com> (raw) In-Reply-To: <1506603015-27202-1-git-send-email-m.purski@samsung.com> Add optional max expected current property which allows calibrating the ina sensor in order to achieve requested precision. Document the changes in Documentation/hwmon/ina2xx. Signed-off-by: Maciej Purski <m.purski@samsung.com> --- Documentation/devicetree/bindings/hwmon/ina2xx.txt | 4 +++- Documentation/hwmon/ina2xx | 9 +++++---- 2 files changed, 8 insertions(+), 5 deletions(-) diff --git a/Documentation/devicetree/bindings/hwmon/ina2xx.txt b/Documentation/devicetree/bindings/hwmon/ina2xx.txt index 02af0d9..25ba372 100644 --- a/Documentation/devicetree/bindings/hwmon/ina2xx.txt +++ b/Documentation/devicetree/bindings/hwmon/ina2xx.txt @@ -14,11 +14,13 @@ Optional properties: - shunt-resistor Shunt resistor value in micro-Ohm - +- max-expected-current + Max expected current value in mA Example: ina220@44 { compatible = "ti,ina220"; reg = <0x44>; shunt-resistor = <1000>; + max-expected-current = <3000>; }; diff --git a/Documentation/hwmon/ina2xx b/Documentation/hwmon/ina2xx index cfd31d9..e9ca838 100644 --- a/Documentation/hwmon/ina2xx +++ b/Documentation/hwmon/ina2xx @@ -51,10 +51,11 @@ INA230 and INA231 are high or low side current shunt and power monitors with an I2C interface. The chips monitor both a shunt voltage drop and bus supply voltage. -The shunt value in micro-ohms can be set via platform data or device tree at -compile-time or via the shunt_resistor attribute in sysfs at run-time. Please -refer to the Documentation/devicetree/bindings/i2c/ina2xx.txt for bindings -if the device tree is used. +The shunt value in micro-ohms and max expected current in mA can be set +via platform data or device tree at compile-time or via the shunt_resistor +and max_expected_current attributes in sysfs at run-time. Please refer to the +Documentation/devicetree/bindings/i2c/ina2xx.txt for bindings if the +device tree is used. Additionally ina226 supports update_interval attribute as described in Documentation/hwmon/sysfs-interface. Internally the interval is the sum of -- 2.7.4
WARNING: multiple messages have this Message-ID (diff)
From: m.purski@samsung.com (Maciej Purski) To: linux-arm-kernel@lists.infradead.org Subject: [PATCH 3/4] dt-bindings: hwmon: Add max-expected-current property to ina2xx Date: Thu, 28 Sep 2017 14:50:14 +0200 [thread overview] Message-ID: <1506603015-27202-4-git-send-email-m.purski@samsung.com> (raw) In-Reply-To: <1506603015-27202-1-git-send-email-m.purski@samsung.com> Add optional max expected current property which allows calibrating the ina sensor in order to achieve requested precision. Document the changes in Documentation/hwmon/ina2xx. Signed-off-by: Maciej Purski <m.purski@samsung.com> --- Documentation/devicetree/bindings/hwmon/ina2xx.txt | 4 +++- Documentation/hwmon/ina2xx | 9 +++++---- 2 files changed, 8 insertions(+), 5 deletions(-) diff --git a/Documentation/devicetree/bindings/hwmon/ina2xx.txt b/Documentation/devicetree/bindings/hwmon/ina2xx.txt index 02af0d9..25ba372 100644 --- a/Documentation/devicetree/bindings/hwmon/ina2xx.txt +++ b/Documentation/devicetree/bindings/hwmon/ina2xx.txt @@ -14,11 +14,13 @@ Optional properties: - shunt-resistor Shunt resistor value in micro-Ohm - +- max-expected-current + Max expected current value in mA Example: ina220 at 44 { compatible = "ti,ina220"; reg = <0x44>; shunt-resistor = <1000>; + max-expected-current = <3000>; }; diff --git a/Documentation/hwmon/ina2xx b/Documentation/hwmon/ina2xx index cfd31d9..e9ca838 100644 --- a/Documentation/hwmon/ina2xx +++ b/Documentation/hwmon/ina2xx @@ -51,10 +51,11 @@ INA230 and INA231 are high or low side current shunt and power monitors with an I2C interface. The chips monitor both a shunt voltage drop and bus supply voltage. -The shunt value in micro-ohms can be set via platform data or device tree at -compile-time or via the shunt_resistor attribute in sysfs at run-time. Please -refer to the Documentation/devicetree/bindings/i2c/ina2xx.txt for bindings -if the device tree is used. +The shunt value in micro-ohms and max expected current in mA can be set +via platform data or device tree at compile-time or via the shunt_resistor +and max_expected_current attributes in sysfs at run-time. Please refer to the +Documentation/devicetree/bindings/i2c/ina2xx.txt for bindings if the +device tree is used. Additionally ina226 supports update_interval attribute as described in Documentation/hwmon/sysfs-interface. Internally the interval is the sum of -- 2.7.4
next prev parent reply other threads:[~2017-09-28 12:50 UTC|newest] Thread overview: 41+ messages / expand[flat|nested] mbox.gz Atom feed top [not found] <CGME20170928125043eucas1p14a7e57443912a37152037b844c1b9967@eucas1p1.samsung.com> 2017-09-28 12:50 ` [PATCH 0/4] Make max expected current configurable for ina2xx drivers Maciej Purski 2017-09-28 12:50 ` Maciej Purski 2017-09-28 12:50 ` Maciej Purski [not found] ` <CGME20170928125053eucas1p19e757ac5c3774f54c7cd0ee4525decbe@eucas1p1.samsung.com> 2017-09-28 12:50 ` [PATCH 1/4] iio: adc: ina2xx: Make max expected current configurable Maciej Purski 2017-09-28 12:50 ` Maciej Purski 2017-10-01 10:29 ` Jonathan Cameron 2017-10-01 10:29 ` Jonathan Cameron 2017-10-04 7:11 ` Maciej Purski 2017-10-04 7:11 ` Maciej Purski 2017-10-08 9:47 ` Jonathan Cameron 2017-10-08 9:47 ` Jonathan Cameron 2017-10-09 8:08 ` Maciej Purski 2017-10-09 8:08 ` Maciej Purski 2017-10-09 8:08 ` Maciej Purski 2017-10-09 13:35 ` Jonathan Cameron 2017-10-09 13:35 ` Jonathan Cameron 2017-10-09 13:35 ` Jonathan Cameron 2017-10-11 14:42 ` Maciej Purski 2017-10-11 14:42 ` Maciej Purski 2017-10-11 15:59 ` Jonathan Cameron 2017-10-11 15:59 ` Jonathan Cameron 2017-10-11 15:59 ` Jonathan Cameron [not found] ` <CGME20170928125057eucas1p2e8a2db5db29e7d7886c3906c7fffd390@eucas1p2.samsung.com> 2017-09-28 12:50 ` [PATCH 2/4] hwmon: (ina2xx) " Maciej Purski 2017-09-28 12:50 ` Maciej Purski 2017-09-28 12:50 ` Maciej Purski 2017-09-28 13:25 ` Guenter Roeck 2017-09-28 13:25 ` Guenter Roeck 2017-09-28 13:25 ` Guenter Roeck [not found] ` <CGME20170928125104eucas1p20a3ead82624005331e36b8ebeca46815@eucas1p2.samsung.com> 2017-09-28 12:50 ` Maciej Purski [this message] 2017-09-28 12:50 ` [PATCH 3/4] dt-bindings: hwmon: Add max-expected-current property to ina2xx Maciej Purski 2017-10-01 10:31 ` Jonathan Cameron 2017-10-01 10:31 ` Jonathan Cameron 2017-10-01 10:31 ` Jonathan Cameron 2017-10-05 15:15 ` Maciej Purski 2017-10-05 15:15 ` Maciej Purski 2017-10-05 22:35 ` Rob Herring 2017-10-05 22:35 ` Rob Herring 2017-10-05 22:35 ` Rob Herring [not found] ` <CGME20170928125109eucas1p1287998eb55b09d5eba9dc929f7dcb284@eucas1p1.samsung.com> 2017-09-28 12:50 ` [PATCH 4/4] ARM: dts: Add max-expected-current properties for ina231 in Odroid XU3 Maciej Purski 2017-09-28 12:50 ` Maciej Purski 2017-09-28 12:50 ` Maciej Purski
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