* [PATCH v2] mtd: nand: samsung: Disable subpage writes on E-die NAND
@ 2018-01-09 13:19 Ladislav Michl
2018-01-10 8:46 ` Boris Brezillon
0 siblings, 1 reply; 2+ messages in thread
From: Ladislav Michl @ 2018-01-09 13:19 UTC (permalink / raw)
To: linux-mtd
Cc: Boris Brezillon, Richard Weinberger, David Woodhouse,
Brian Norris, Marek Vasut, Cyrille Pitchen
Samsung E-die SLC NAND manufactured using 21nm process (K9F1G08U0E)
does not support partial page programming, so disable subpage writes
for it. Manufacturing process is stored in lowest two bits of 5th ID
byte.
Signed-off-by: Ladislav Michl <ladis@linux-mips.org>
---
Changes:
- v2:
* Reword commit log
* Check also for device type
* Reimplement if statements using switch
drivers/mtd/nand/nand_samsung.c | 20 ++++++++++++++++----
1 file changed, 16 insertions(+), 4 deletions(-)
diff --git a/drivers/mtd/nand/nand_samsung.c b/drivers/mtd/nand/nand_samsung.c
index f6b0a63a068c..6971c35b78e9 100644
--- a/drivers/mtd/nand/nand_samsung.c
+++ b/drivers/mtd/nand/nand_samsung.c
@@ -92,10 +92,22 @@ static void samsung_nand_decode_id(struct nand_chip *chip)
} else {
nand_decode_ext_id(chip);
- /* Datasheet values for SLC Samsung K9F4G08U0D-S[I|C]B0(T00) */
- if (nand_is_slc(chip) && chip->id.data[1] == 0xDC) {
- chip->ecc_step_ds = 512;
- chip->ecc_strength_ds = 1;
+ if (nand_is_slc(chip)) {
+ switch (chip->id.data[1]) {
+ /* K9F4G08U0D-S[I|C]B0(T00) */
+ case 0xDC:
+ chip->ecc_step_ds = 512;
+ chip->ecc_strength_ds = 1;
+ break;
+ /* K9F1G08U0E 21nm chips do not support subpage write */
+ case 0xF1:
+ if (chip->id.len > 4 &&
+ (chip->id.data[4] & GENMASK(1,0)) == 0x1)
+ chip->options |= NAND_NO_SUBPAGE_WRITE;
+ break;
+ default:
+ break;
+ }
}
}
}
--
2.15.1
^ permalink raw reply related [flat|nested] 2+ messages in thread
* Re: [PATCH v2] mtd: nand: samsung: Disable subpage writes on E-die NAND
2018-01-09 13:19 [PATCH v2] mtd: nand: samsung: Disable subpage writes on E-die NAND Ladislav Michl
@ 2018-01-10 8:46 ` Boris Brezillon
0 siblings, 0 replies; 2+ messages in thread
From: Boris Brezillon @ 2018-01-10 8:46 UTC (permalink / raw)
To: Ladislav Michl
Cc: linux-mtd, Richard Weinberger, Marek Vasut, Cyrille Pitchen,
Brian Norris, David Woodhouse
On Tue, 9 Jan 2018 14:19:11 +0100
Ladislav Michl <ladis@linux-mips.org> wrote:
> Samsung E-die SLC NAND manufactured using 21nm process (K9F1G08U0E)
> does not support partial page programming, so disable subpage writes
> for it. Manufacturing process is stored in lowest two bits of 5th ID
> byte.
Applied.
Thanks,
Boris
>
> Signed-off-by: Ladislav Michl <ladis@linux-mips.org>
> ---
> Changes:
> - v2:
> * Reword commit log
> * Check also for device type
> * Reimplement if statements using switch
>
> drivers/mtd/nand/nand_samsung.c | 20 ++++++++++++++++----
> 1 file changed, 16 insertions(+), 4 deletions(-)
>
> diff --git a/drivers/mtd/nand/nand_samsung.c b/drivers/mtd/nand/nand_samsung.c
> index f6b0a63a068c..6971c35b78e9 100644
> --- a/drivers/mtd/nand/nand_samsung.c
> +++ b/drivers/mtd/nand/nand_samsung.c
> @@ -92,10 +92,22 @@ static void samsung_nand_decode_id(struct nand_chip *chip)
> } else {
> nand_decode_ext_id(chip);
>
> - /* Datasheet values for SLC Samsung K9F4G08U0D-S[I|C]B0(T00) */
> - if (nand_is_slc(chip) && chip->id.data[1] == 0xDC) {
> - chip->ecc_step_ds = 512;
> - chip->ecc_strength_ds = 1;
> + if (nand_is_slc(chip)) {
> + switch (chip->id.data[1]) {
> + /* K9F4G08U0D-S[I|C]B0(T00) */
> + case 0xDC:
> + chip->ecc_step_ds = 512;
> + chip->ecc_strength_ds = 1;
> + break;
> + /* K9F1G08U0E 21nm chips do not support subpage write */
> + case 0xF1:
> + if (chip->id.len > 4 &&
> + (chip->id.data[4] & GENMASK(1,0)) == 0x1)
> + chip->options |= NAND_NO_SUBPAGE_WRITE;
> + break;
> + default:
> + break;
> + }
> }
> }
> }
^ permalink raw reply [flat|nested] 2+ messages in thread
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2018-01-09 13:19 [PATCH v2] mtd: nand: samsung: Disable subpage writes on E-die NAND Ladislav Michl
2018-01-10 8:46 ` Boris Brezillon
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