Re: [RFC PATCH 13/15] memory: samsung: endian fixes for IO

[Krzysztof Kozlowski <k.kozlowski@samsung.com>]

On 06/08/2016 08:31 PM, Matthew Leach wrote:
> From: Ben Dooks <ben.dooks@codethink.co.uk>
> 
> Use the relaxed versions of the IO accessors to avoid any issues
> if running in big endian.
> 
> Signed-off-by: Ben Dooks <ben.dooks@codethink.co.uk>
> ---
> Cc: Pavel Fedin <p.fedin@samsung.com>
> Cc: Krzysztof Kozlowski <k.kozlowski@samsung.com>
> Cc: Pankaj Dubey <pankaj.dubey@samsung.com>
> Cc: linux-arm-kernel@lists.codethink.co.uk
> ---
>  drivers/memory/samsung/exynos-srom.c | 6 +++---
>  1 file changed, 3 insertions(+), 3 deletions(-)
> 
> diff --git a/drivers/memory/samsung/exynos-srom.c b/drivers/memory/samsung/exynos-srom.c
> index 96756fb..ac8f79c 100644
> --- a/drivers/memory/samsung/exynos-srom.c
> +++ b/drivers/memory/samsung/exynos-srom.c
> @@ -91,11 +91,11 @@ static int exynos_srom_configure_bank(struct exynos_srom *srom,
>  	if (width == 2)
>  		cs |= 1 << EXYNOS_SROM_BW__DATAWIDTH__SHIFT;
>  
> -	bw = __raw_readl(srom->reg_base + EXYNOS_SROM_BW);
> +	bw = readl_relaxed(srom->reg_base + EXYNOS_SROM_BW);
>  	bw = (bw & ~(EXYNOS_SROM_BW__CS_MASK << bank)) | (cs << bank);
> -	__raw_writel(bw, srom->reg_base + EXYNOS_SROM_BW);
> +	writel_relaxed(bw, srom->reg_base + EXYNOS_SROM_BW);
>  
> -	__raw_writel(pmc | (timing[0] << EXYNOS_SROM_BCX__TACP__SHIFT) |
> +	writel_relaxed(pmc | (timing[0] << EXYNOS_SROM_BCX__TACP__SHIFT) |
>  		    (timing[1] << EXYNOS_SROM_BCX__TCAH__SHIFT) |
>  		    (timing[2] << EXYNOS_SROM_BCX__TCOH__SHIFT) |
>  		    (timing[3] << EXYNOS_SROM_BCX__TACC__SHIFT) |

It breaks indentation of arguments. With that change and Matthew's SoB:
Reviewed-by: Krzysztof Kozlowski <k.kozlowski@samsung.com>

I can take it through samsung-soc tree after fixing above.

Best regards,
Krzysztof